SINO-IC · FETs & Power MOSFETs · MPN SE2N65
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 13.5nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 10.5pF |
| RDS(on) | 3.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 680pF |
N-Channel 650V 2A 33W Surface Mount TO-252