SINO-IC · FETs & Power MOSFETs · MPN SE2N60B
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 13.5nC@10V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 33W |
| RDS(on) | 4.3Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 10.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 520pF |
| Type | N-Channel |
N-Channel 600V 2A 33W Surface Mount TO-252