SINO-IC SE2333

SINO-IC · FETs & Power MOSFETs · MPN SE2333

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Specifications

Gate Charge(Qg)11.5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)20mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.1nF
TypeP-Channel

Technical details

P-Channel 20V 1.8W Surface Mount SOT-23-3

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