SINO-IC SE2305Q

SINO-IC · FETs & Power MOSFETs · MPN SE2305Q

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Specifications

Gate Charge(Qg)9.3nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.7A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)140pF
Number1 P-Channel
Input Capacitance(Ciss)1.02nF

Technical details

P-Channel 20V 4.7A 1.25W Surface Mount SOT-23

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