SINO-IC SE2102E

SINO-IC · FETs & Power MOSFETs · MPN SE2102E

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Specifications

Gate Charge(Qg)1.4nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)600mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation170mW
RDS(on)470mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)130pF

Technical details

N-Channel 20V 0.6A 170mW Surface Mount SOT-523

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