SINO-IC · FETs & Power MOSFETs · MPN SE20NS65F
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.44nF |
| Type | N-Channel |
650V 20A 4.5V 208W 160mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS