SINO-IC · FETs & Power MOSFETs · MPN SE20NS60TS
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 90nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 208W |
| RDS(on) | 160mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.44nF |
600V 20A 2.5V 208W 160mΩ@10V 1 N-channel TO-247S Single FETs, MOSFETs RoHS