SINO-IC SE20N110

SINO-IC · FETs & Power MOSFETs · MPN SE20N110

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)898pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)743pF
RDS(on)5.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)7.032nF
TypeN-Channel

Technical details

N-Channel 20V 110A 90W Surface Mount DFN-8(3x3)

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