SINO-IC · FETs & Power MOSFETs · MPN SE1991G
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| Gate Charge(Qg) | 115nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.36nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 223W |
| RDS(on) | 3.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.3nF |
| Type | N-Channel |
100V 120A 2.9V 223W 3.8mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS