SINO-IC SE18NS65F

SINO-IC · FETs & Power MOSFETs · MPN SE18NS65F

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)43nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation156W
RDS(on)260mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 650V 18A 156W Through Hole TO-220F

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