SINO-IC SE150180GTS

SINO-IC · FETs & Power MOSFETs · MPN SE150180GTS

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)476pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation429W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)7.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.977nF
TypeN-Channel

Technical details

N-Channel 150V 180A 429W Through Hole TO-247S

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