SINO-IC SE12N50FRA

SINO-IC · FETs & Power MOSFETs · MPN SE12N50FRA

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)700mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)739pF
TypeN-Channel

Technical details

N-Channel 500V 12A 83W Through Hole TO-220

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