SINO-IC SE120120GA

SINO-IC · FETs & Power MOSFETs · MPN SE120120GA

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Specifications

Gate Charge(Qg)84.7nC@10V
Drain to Source Voltage120V
Output Capacitance(Coss)641pF
Current - Continuous Drain(Id)129A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation185W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)6.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.6nF
Vgs±20V

Technical details

N-Channel 120V 129A Through Hole TO-220

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