SINO-IC · FETs & Power MOSFETs · MPN SE10060B
No reviews yet — be the first to review SINO-IC SE10060B.
| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 17mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.4nF |
| Type | N-Channel |
N-Channel 100V 200A 170W Surface Mount TO-263