SINO-IC SE100250GTS

SINO-IC · FETs & Power MOSFETs · MPN SE100250GTS

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Specifications

Gate Charge(Qg)208nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.6nF
Current - Continuous Drain(Id)250A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation400W
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15.7nF
TypeN-Channel

Technical details

N-Channel 100V 250A 400W Through Hole TO-247AC-3

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