SINEDEVICE SDM200P06S

SINEDEVICE · FETs & Power MOSFETs · MPN SDM200P06S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)5.5nC@10V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1W
RDS(on)300mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)17pF
Input Capacitance(Ciss)311pF
TypeP-Channel

Technical details

P-Channel 60V 2A 1W Surface Mount SOT-23

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