SINEDEVICE SDM092GS10V

SINEDEVICE · FETs & Power MOSFETs · MPN SDM092GS10V

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Specifications

Gate Charge(Qg)5.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)63pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)92mΩ@10V
Input Capacitance(Ciss)230pF
TypeN-Channel

Technical details

N-Channel 100V 3A 0.5W Surface Mount SOT-23-3L

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