SINEDEVICE SDM080N02S

SINEDEVICE · FETs & Power MOSFETs · MPN SDM080N02S

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Specifications

Gate Charge(Qg)9nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)119pF
Current - Continuous Drain(Id)2.1A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation400mW
RDS(on)60mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)79pF
Input Capacitance(Ciss)299pF
TypeN-Channel

Technical details

N-Channel 20V 2.1A 400mW Surface Mount SOT-23

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