SINEDEVICE SDM021G10K2D

SINEDEVICE · FETs & Power MOSFETs · MPN SDM021G10K2D

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Specifications

Gate Charge(Qg)12.9nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)173pF
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation39W
RDS(on)21mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)5.3pF
Number2 N-Channel
Input Capacitance(Ciss)771pF
TypeN-Channel

Technical details

N-Channel 100V 31A 39W Surface Mount PDFN-8L-D(5x6)

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