SINEDEVICE SDM010G10D

SINEDEVICE · FETs & Power MOSFETs · MPN SDM010G10D

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)8.3pF
RDS(on)10mΩ@10V
Input Capacitance(Ciss)1.537nF
TypeN-Channel

Technical details

N-Channel 100V 70A 89W Surface Mount TO-252

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