Siliup SP9N90TF

Siliup · FETs & Power MOSFETs · MPN SP9N90TF

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Specifications

Configuration-
Gate Charge(Qg)58nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)208pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation250W
RDS(on)980mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number-
Input Capacitance(Ciss)2.713nF

Technical details

N-Channel 900V 9A 250W Through Hole TO-247

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