Siliup SP9N50TH

Siliup · FETs & Power MOSFETs · MPN SP9N50TH

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Specifications

Configuration-
Gate Charge(Qg)19.4nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)104pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)680mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.106nF

Technical details

N-Channel 500V 9A 178W Surface Mount TO-252

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