Siliup · FETs & Power MOSFETs · MPN SP8N65TQ
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Configuration | - |
| Output Capacitance(Coss) | 117pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 800mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | - |
| Input Capacitance(Ciss) | 1.233nF |
N-Channel 650V 8A 110W Through Hole TO-220-3L-C