Siliup SP85N04BHTQ

Siliup · FETs & Power MOSFETs · MPN SP85N04BHTQ

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Specifications

Drain to Source Voltage85V
Configuration-
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)485pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.3nF

Technical details

N-Channel 85V 120A 180W Through Hole TO-220-3L-C

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