Siliup SP85N04AGHTO

Siliup · FETs & Power MOSFETs · MPN SP85N04AGHTO

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)428pF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation246W
RDS(on)3.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-channel
Input Capacitance(Ciss)3.265nF

Technical details

85V 160A 3V 246W 3.8mΩ@10V 1 N-channel TOLL Single FETs, MOSFETs RoHS

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