Siliup SP85N04AGHTD

Siliup · FETs & Power MOSFETs · MPN SP85N04AGHTD

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)26nC@10V
Output Capacitance(Coss)677pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.451nF
TypeN-Channel

Technical details

N-Channel 85V 130A 140W Surface Mount TO-263-3L

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