Siliup SP85N02AGHTF

Siliup · FETs & Power MOSFETs · MPN SP85N02AGHTF

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)143nC@10V
Output Capacitance(Coss)4.7nF
Current - Continuous Drain(Id)280A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation270W
RDS(on)1.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)190pF
Number1 N-channel
Input Capacitance(Ciss)9.1nF
TypeN-Channel

Technical details

N-Channel 85V 280A 270W Through Hole TO-247

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