Siliup · FETs & Power MOSFETs · MPN SP85N01BGHTQ
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| Drain to Source Voltage | 85V |
|---|---|
| Gate Charge(Qg) | 126nC@10V |
| Output Capacitance(Coss) | 1.75nF |
| Current - Continuous Drain(Id) | 280A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 270W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 2.25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.75nF |
| Type | N-Channel |
N-Channel 85V 280A 270W Through Hole TO-220-3L