Siliup SP85N01BGHTO

Siliup · FETs & Power MOSFETs · MPN SP85N01BGHTO

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)253nC@10V
Current - Continuous Drain(Id)350A
Output Capacitance(Coss)2.788nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation456W
RDS(on)1.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)87pF
Number1 N-channel
Input Capacitance(Ciss)11.547nF

Technical details

85V 350A 3V 456W 1.3mΩ@10V 1 N-channel TOLL Single FETs, MOSFETs RoHS

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