Siliup SP80N120CTK

Siliup · FETs & Power MOSFETs · MPN SP80N120CTK

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Specifications

Gate Charge(Qg)216nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)239pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation450W
RDS(on)13mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number1 N-channel
Input Capacitance(Ciss)3.815nF
TypeN-Channel

Technical details

N-Channel 1.2kV 120A 450W Through Hole TO-247-4L

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