Siliup SP80N09GDHNK

Siliup · FETs & Power MOSFETs · MPN SP80N09GDHNK

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Specifications

Output Capacitance(Coss)332pF
Pd - Power Dissipation71.4W
Configuration-
Gate Charge(Qg)16nC
Drain to Source Voltage80V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)936pF

Technical details

71.4W 80V 3V 9.5mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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