Siliup · FETs & Power MOSFETs · MPN SP80N06HTQ
No reviews yet — be the first to review Siliup SP80N06HTQ.
| Output Capacitance(Coss) | 285pF |
|---|---|
| Pd - Power Dissipation | 165W |
| Configuration | - |
| Gate Charge(Qg) | 108nC |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.61nF |
165W 80V 3V 6mΩ@10V 1 N-channel N-Channel TO-220-3L Single FETs, MOSFETs RoHS