Siliup SP80N04HTQ

Siliup · FETs & Power MOSFETs · MPN SP80N04HTQ

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)110nC@10V
Output Capacitance(Coss)514pF
Current - Continuous Drain(Id)145A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation244W
Reverse Transfer Capacitance (Crss@Vds)237pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.533nF

Technical details

80V 145A 2.5V 244W 4.5mΩ@10V 1 N-channel TO-220-3L Single FETs, MOSFETs RoHS

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