Siliup SP80N03BGHTQ

Siliup · FETs & Power MOSFETs · MPN SP80N03BGHTQ

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation160W
RDS(on)3.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-channel
Input Capacitance(Ciss)4.36nF
TypeN-Channel

Technical details

N-Channel 80V 130A 160W Through Hole TO-220

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