Siliup SP80N03AHTQ

Siliup · FETs & Power MOSFETs · MPN SP80N03AHTQ

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Specifications

Gate Charge(Qg)183nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)722pF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
RDS(on)2.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)386pF
Number1 N-channel
Input Capacitance(Ciss)7.61nF
TypeN-Channel

Technical details

N-Channel 80V 200A 300W Through Hole TO-220-3L

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