Siliup SP75N65CTF

Siliup · FETs & Power MOSFETs · MPN SP75N65CTF

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Specifications

Gate Charge(Qg)125nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)112A
Output Capacitance(Coss)251pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation454W
RDS(on)32mΩ
Reverse Transfer Capacitance (Crss@Vds)19pF
Number1 N-channel
Input Capacitance(Ciss)3.09nF
TypeN-Channel

Technical details

650V 112A 454W Through Hole TO-247

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