Siliup · FETs & Power MOSFETs · MPN SP6N90TQ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 115pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 167W |
| RDS(on) | 2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | - |
| Input Capacitance(Ciss) | 1.35nF |
N-Channel 900V 6A 167W Through Hole TO-220-3L-C