Siliup SP6602CTS

Siliup · FETs & Power MOSFETs · MPN SP6602CTS

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Specifications

Gate Charge(Qg)9nC@4.5V;9nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)60pF;72pF
Current - Continuous Drain(Id)3.5A;2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.15W
Reverse Transfer Capacitance (Crss@Vds)53pF;57pF
RDS(on)30mΩ@10V;60mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)420pF;501pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 3.5A 1.15W Surface Mount SOT-23-6L

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