Siliup SP60P60TS

Siliup · FETs & Power MOSFETs · MPN SP60P60TS

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)77pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
RDS(on)60mΩ@10V;75mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)58pF
Number1 P-Channel
Input Capacitance(Ciss)1.09nF
TypeP-Channel

Technical details

P-Channel 60V 5A 3W Surface Mount SOT-23-6L

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