Siliup SP60P60TH

Siliup · FETs & Power MOSFETs · MPN SP60P60TH

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Specifications

Output Capacitance(Coss)77pF
Pd - Power Dissipation32W
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)23nC@10V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)60mΩ@10V;75mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.09nF

Technical details

P-Channel 60V 14A 32W Surface Mount TO-252

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