Siliup SP60P30P8

Siliup · FETs & Power MOSFETs · MPN SP60P30P8

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)154pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)116pF
RDS(on)30mΩ@10V;38mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.18nF
TypeP-Channel

Technical details

P-Channel 60V 7.5A 3.1W Surface Mount SOP-8

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