Siliup SP60P30NJ

Siliup · FETs & Power MOSFETs · MPN SP60P30NJ

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)154pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)116pF
RDS(on)30mΩ@10V;38mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.18nF
TypeP-Channel

Technical details

P-Channel 60V 20A 40W Surface Mount PDFNWB-8L(3.3x3.3)

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