Siliup SP60P25TH

Siliup · FETs & Power MOSFETs · MPN SP60P25TH

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Specifications

Gate Charge(Qg)46.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)179pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation86W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)25mΩ@10V;30mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.417nF
TypeP-Channel

Technical details

P-Channel 60V 40A 86W Surface Mount TO-252-2L

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