Siliup SP60P23TH

Siliup · FETs & Power MOSFETs · MPN SP60P23TH

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Specifications

Gate Charge(Qg)25nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)224pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation86.8W
Reverse Transfer Capacitance (Crss@Vds)141pF
RDS(on)28mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.635nF
TypeP-Channel

Technical details

P-Channel 60V 40A 86.8W Surface Mount TO-252-2L

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