Siliup SP60P140T2

Siliup · FETs & Power MOSFETs · MPN SP60P140T2

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1W
RDS(on)140mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19pF
Number1 P-Channel
Input Capacitance(Ciss)455pF
TypeP-Channel

Technical details

P-Channel 60V 1.8A 1W Surface Mount SOT-23

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