Siliup SP60P140T1

Siliup · FETs & Power MOSFETs · MPN SP60P140T1

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)140mΩ@10V;160mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)455pF

Technical details

P-Channel 60V 1.8A 1.2W Surface Mount SOT-23-3L

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