Siliup SP60P11TH

Siliup · FETs & Power MOSFETs · MPN SP60P11TH

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Specifications

Gate Charge(Qg)85.5nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)489pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation150W
RDS(on)11mΩ@10V;14mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)364pF
Number1 P-Channel
Input Capacitance(Ciss)7.7nF
TypeP-Channel

Technical details

P-Channel 60V 80A 150W Surface Mount TO-252-2L

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