Siliup SP60P11P8

Siliup · FETs & Power MOSFETs · MPN SP60P11P8

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Specifications

Gate Charge(Qg)85.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)489pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation5.5W
RDS(on)11.5mΩ@10V;15mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)364pF
Number1 P-Channel
Input Capacitance(Ciss)7.7nF

Technical details

60V 12A 5.5W Surface Mount SOP-8L

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