Siliup SP60P11NK

Siliup · FETs & Power MOSFETs · MPN SP60P11NK

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Specifications

Gate Charge(Qg)85.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)489pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation135W
RDS(on)11mΩ@10V;14mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)364pF
Number-
Input Capacitance(Ciss)7.7nF
TypeP-Channel

Technical details

P-Channel 60V 70A 135W Surface Mount PDFNWB-8L(5x6)

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