Siliup SP60P05GTQ

Siliup · FETs & Power MOSFETs · MPN SP60P05GTQ

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Specifications

Gate Charge(Qg)82nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.132nF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation153W
RDS(on)10.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)81pF
Number1 P-Channel
Input Capacitance(Ciss)6.185nF
TypeP-Channel

Technical details

P-Channel 60V 130A 153W Through Hole TO-220-3L

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